| PART |
Description |
Maker |
| RQ3E180AJ |
Nch 30V 18A Middle Power MOSFET
|
Rohm
|
| RQ7E110AJTCR |
Nch 30V 11A Middle Power MOSFET
|
ROHM
|
| 2SCR574DA07 |
NPN 2.0A 80V Middle Power Transistor
|
Rohm
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| RF6E065BN |
Nch 30V 6.5A Middle Power MOSFET
|
Rohm
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| 2SCR553P 2SCR553PT100 |
NPN 2.0A 50V Middle Power Transistor
NPN 2.0A 50V Middle Power Transistor
|
Rohm
|
| NESG3031M14NBSP NESG3031M14-T3 NESG3031M14 |
From old datasheet system
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC[NEC]
|
| 2SD2402 2SD2402EX 2SD2402EZ 2SD2402EY |
NPN epitaxial type silicon transistor
TRANSISTOR,BJT,NPN,30V V(BR)CEO,5A I(C),TO-243
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 5A I(C) | TO-243
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 2SD2402数据表|数据表[04/2002]
|
nec
Dialight PLC
|
| QS8K2FRA |
30V Nch Nch Middle Power MOSFET
|
Rohm
|
